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3rd International Conference on Magnetism and Magnetic Materials

Rome, Italy

Shavkat U Yuldashev

Dongguk University, South Korea

Title: Critical behavior of GaMnAs diluted magnetic semiconductors near the Curie temperature

Biography

Biography: Shavkat U Yuldashev

Abstract

GaMnAs have been studied intensely over the last few decades and have become a model system for diluted ferromagnetic semiconductors. At present, it is accepted that the Curie temperature of GaMnAs with metallic type of the conductivity coincides well with the maximum of the temperature derivative of the resistivity dρ/dT, similar to the ferromagnetic metals like Ni and Fe, whereas, for samples with low concentration of free carriers, the TC coincides with the resistivity maximum. The critical behavior of GaMnAs near the Curie temperature was experimentally studied by using the temperature dependencies of the resistivity, the specific heat, and the magnetization of GaMnAs. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid only for the samples with a high concentration of free carriers. For the samples with low concentration of free carriers, the TC coincides with the resistivity maximum. The magnetic specific heat for T > TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when temperature become closer to the Curie temperature. This is explained by the existence of Mn-Mn dimers oriented along one direction at the beginning of the formation of the ferromagnetic phase on the paramagnetic side of the phase transition.