Magnetoelectronic Materials

Magnetic disk read-heads, magnetic random-access memories (MRAM) and spin-dependent conveyance assemblies can all be sheltered by the term magnetoelectronic devices. This assessment covers spin-dependent transference in magnetic multilayers and features of exploitation of this physical property for magnetic nonvolatile memories. The inequality in the density of states for mainstream spin-carriers versus marginal spin carriers in magnetic materials, triggers spintronic materials and device advancements. Such devices are categorized by the enthralling interaction of electronic and magnetic possessions.

  • Giant magnetoresistance
  • Tunnel magnetoresistance
  • Magnetoresistive random-access memory (MRAM)
  • Multiferroic materials
  • Hetero-structures
  • Magnetoelectric
  • Complex oxides
  • Half-metallic materials
  • Hall effect
  • Magnetic oxides
  • Functional oxides
  • Magnetic tunnel
  • Chemical sensors
  • Molecular beam epitaxy (MBE)
  • Sputter growth

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