Magnetoelectronic Materials and Multiferroic Materials

Magnetic disk read-heads, magnetic random-access memories and spin-dependent conveyance assemblies can all be protected by the term magnetoelectronic devices. This assessment covers features of exploitation of this physical property for magnetic nonvolatile memories and spin-dependent transference in magnetic multilayers. Materials that exhibit more than one of the primary ferroic properties are defined as multiferroics. Magnetoelectric and multiferroics are both space-inversion and time-reversal anti-symmetric (ferromagnetic and ferroelectric). Most multiferroic materials identified to date are transition-metal oxides, which are compounds made of transition metals with oxygen and often an additional main-group cation. For identifying multiferroics, transition-metal oxides are a favorable class of materials.

  • Multifunctional magnetic materials
  • Giant magnetoresistance
  • Magnetoelectric interfaces
  • Magnetic tunnel junction
  • Complex oxides
  • Magnetoresistance

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