Magnetoelectronic Materials and Multiferroic Materials

Magnetic disk read-heads, magnetic random-access memories (MRAM) and spin-dependent conveyance assemblies can all be sheltered by the term magnetoelectronic devices. This assessment covers spin-dependent transference in magnetic multilayers and features of exploitation of this physical property for magnetic nonvolatile memories. Materials that exhibit more than one of the primary ferroic properties are defined as multiferroics. Magnetoelectric and multiferroics are both space-inversion and time-reversal anti-symmetric (ferromagnetic and ferroelectric). Most multiferroic materials identified to date are transition-metal oxides, which are compounds made of transition metals with oxygen and often an additional main-group cation. Transition-metal oxides are a favorable class of materials for identifying multiferroics.

  • Multifunctional magnetic materials
  • Giant magnetoresistance
  • Magnetoelectric interfaces
  • Magnetic tunnel junction
  • Half-metallic materials
  • Complex oxides
  • Magnetoresistance
  • Single-phase multi-ferroic materials
  • Composite multi-ferroic materials
  • Ferromagnetism

Related Conference of Magnetoelectronic Materials and Multiferroic Materials

February 27-28, 2019

Global Meet on Astrophysics & Space Science

Paris, France
April 08-09, 2019 |

European Meet on Laser, Optics & Photonics

Prague, Czech Republic
May 13-14, 2019

6th World Congress on Physics

Paris, France
May 13-14, 2019

13th International Conference on Optics, Lasers & Photonics

Radisson Hotel Narita | Tokyo, Japan
August 19-20, 2019

Asia Pacific Physics Conference

Tokyo, Japan
October 14-16, 2019

5th International Conference on Physics

London, UK
December 16-17, 2019

International Conference on Bio and Medical Physics

Dubai, UAE

Magnetoelectronic Materials and Multiferroic Materials Conference Speakers

Recommended Sessions

Related Journals

Are you interested in